Microchip Tech APT43GA90BD30
337W 78A 900V PT Through Type TO-247-3 IGBT Transistors / Modules ROHS
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單價
1+
$13.88813
10+
$13.25866
30+
$12.16666
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$11.21405
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$13.89
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APT43GA90BD30
MICROCHIP
1+
$13.03116
10+
$12.37322
30+
$11.23618
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| 屬性 | 值 |
|---|---|
| 製造商產品編號 | APT43GA90BD30 |
| 製造商 | MICROCHIP |
| 產品分類 | IGBT Transistors / Modules |
| RoHS | Yes |
| ECCN | EAR99 |
| Operating Temperature | - |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Input Capacitance (Cies@Vce) | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Collector-Emitter Breakdown Voltage (Vces) | - |
| Turn?on Delay Time (Td(on)) | 12ns |
| Type | PT (Through Type) |
| Collector-Emitter Breakdown Voltage (Vces) | 900V |
| Turn?off Switching Loss (Eoff) | 0.425mJ |
| Collector Current (Ic) | 78A |
| Power Dissipation (Pd) | 337W |
| Turn?off Delay Time (Td(off)) | 82ns |
| Total Gate Charge (Qg@Ic,Vge) | 116nC |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.1V@15V,47A |
| Turn?on Switching Loss (Eon) | 0.875mJ |
| IGBT Type | - |
| Td(on) | - |
| Gate Charge(Qg) | - |
| Pd - Power Dissipation | - |
| Input Capacitance(Cies) | - |
| Turn-On Energy (Eon) | - |
| Td(off) | - |
| Switching Energy(Eoff) | - |
| Current - Collector(Ic) | - |
| Package | TO-247-3 |
| Packaging | Tube-packed |
| Standard Package | 30 |
| Weight | 7.562 |
