Package/EnclosureAG-62MM-2 Operating temperature-40C ~ 150C Power Rating4300W

Infineons new L5 low saturation voltage V CEsat TRENCHSTOP IGBT family has been specifically optimized for low switching frequencies ranging from 50Hz to 20kHz. Optimization of the carrier profile of the innovative 55m TRENCHSTOP 5 thin wafer technology allows to reduce conduction losses to the intrinsically low level 1.05V for 30A IGBT and 1.10V for 75A IGBT.

High speed 600 V, 20 A hard-switching TRENCHSTOP IGBT3 co-packed with free-wheeling diode in a TO247 package provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses.

The Reverse Conducting R5 650 V , 40 A RC-H5 IGBTs with monolithically integrated reverse conducting diode in a TO247 package has been optimized for the demanding requirements of Induction Cooking applications

The Reverse Conducting E1 1200 V , 25 A RC-E IGBTs with monolithically integrated diode in a TO-247 package focusing on system efficiency and reliability for the demanding requirements of induction cooking

High speed 1200 V, 25 A single TRENCHSTOP IGBT3 in a TO247 package provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses.

IGBT, 60A, 900V, N-CHANNEL

High speed 600 V , 30 A single TRENCHSTOP IGBT3 in a TO247 package provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses.

IGBT 600V 14A 38W DPAK

IGBT 1200V 50A 179W TO247